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Single-Phase, Synchronous MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V DD = V SKIP = 5V, T A = -40 ° C to +105 ° C, unless otherwise noted. Typical values are at T A = +25 ° C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
High (DH = high; DL = low)
V DD -
0.4
PWM Input Levels
Midlevel
V DD /2
- 0.4
V DD /2
+ 0.4
V
Low (DH = low; DL = high)
0.4
PWM Input Current
I PWM
Sink; PWM forced to V DD
Source; PWM forced to GND
-400
80
-200
+200
-80
400
μA
Midlevel Shutdown Hold
Time
SKIP Input Threshold
t MID
Rising edge
Falling edge
120
0.8
300
1.7
1.5
600
2.4
ns
V
SKIP Input Current
Thermal-Shutdown
Threshold
I SKIP
T SHDN
Sink; SKIP forced to 0.8V to V DD , T A = +25°C
Hysteresis = 20°C
-4
-2
+160
-0.5
μA
°C
Note 1: Limits are 100% production tested at T A = +25°C. Maximum and minimum limits over temperature are guaranteed through
correlation using statistical-quality-control (SQC) methods.
Typical Operating Characteristics
(Circuit of Figure 1, V DD = 5V, C DH = 3nF, C DL = 3nF, T A = +25°C, unless otherwise noted.)
300
PACKAGE-POWER DISSIPATION
vs. PWM FREQUENCY
500
PACKAGE-POWER DISSIPATION
vs. CAPACITIVE LOAD ON DH AND DL
30
DL RISE AND FALL TIMES
vs. CAPACITIVE LOAD
250
B
450
400
C
25
RISE TIME
200
A
350
300
20
150
250
B
15
200
100
150
A
10
FALL TIME
50
0
A: C DH = 3.3nF; C DL = 3.3nF
B: C DH = 1.5nF; C DL = 6.8nF
100
50
0
A: 300kHz
B: 600kHz
C: 1MHz
5
0
C DL = C DH
0
200
400 600 800 1000
1200
1000
2500
4000 5500 7000
8500 10,000
1000
2500
4000 5500 7000
8500 10,000
PWM FREQUENCY (kHz)
CAPACITANCE (pF)
CAPACITANCE (pF)
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3
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